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p - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - n o v . , 2 0 0 9 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 4 3 2 3 k f e a t u r e s a p p l i c a t i o n s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n p - c h a n n e l m o s f e t - 3 0 v / - 7 a , r d s ( o n ) = 2 4 m w ( t y p . ) @ v g s = - 1 0 v r d s ( o n ) = 4 1 m w ( t y p . ) @ v g s = - 4 . 5 v s u p e r h i g h d e n s e c e l l d e s i g n r e l i a b l e a n d r u g g e d e s d r a t i n g : 1 . 5 k v h b m s o p - 8 p a c k a g e l e a d f r e e a n d g r e e n d e v i c e s a v a i l a b l e ( r o h s c o m p l i a n t ) t o p v i e w o f s o p - 8 p o w e r m a n a g e m e n t i n t v , l c d m a p p l i c a t i o n s y s t e m . s s s g d d d d n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a - t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 d f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . a n p e c d e f i n e s ? g r e e n ? t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) . apm4323 handling code temperature range package code package code k : sop-8 operating junction temperature range c : -55 to 150 o c handling code tr : tape & reel assembly material g : halogen and lead free device apm4323 k : apm4323 xxxxx xxxxx - date code assembly material ( 1, 2, 3 ) d g d s s (4) (5,6,7,8) s d d
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - n o v . , 2 0 0 9 w w w . a n p e c . c o m . t w 2 a p m 4 3 2 3 k a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter rating unit v dss drain - source voltage - 30 v gss gate - source voltage 20 v t a =25 c - 7 i d a continuous drain current t a =70 c - 5.6 i dm a pulsed drain current v gs = - 1 0v - 30 a i s a diode continuous forward current - 3 a e ar b repetitive avalanche energy (l=0.3mh) 50 mj t j maximum junction temperature 150 t stg storage temperature range - 55 to 150 c t a =25 c 2.5 p d a maximum power dissipation t a =70 c 1.6 w r q ja a,c thermal resistance - junction to ambient t 10sec 50 c / w r q jl thermal resistance - junction to lead steady state 25 c / w notes a ?g surface mounted on 1in 2 pad area, t 10sec. notes b ?g uis tested and pulse width limited by maximum junction temperature 150 c (initial temperature t j =25 c ). notes c ?g maximum under steady state conditions is 75 c /w. apm 4323k symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds = - 250 m a - 30 - - v v ds = - 24v, v gs =0v - - - 1 i dss zero gate voltage drain current t j =85 c - - - 30 m a v gs(th) gate threshold voltage v ds =v gs , i ds = - 250 m a - 1 - 2 - 2.5 v i gss gate leakage current v gs = 16 v, v ds =0v - - 10 a v gs = - 10 v, i ds = - 7 a - 24 31.5 r ds(on) d drain - source on - state resistance v gs = - 4.5 v, i ds = - 5 a - 41 55 m w diode characteristics v sd d diode forward voltage i sd = - 3 a, v gs =0v - - 0.8 - 1.1 v t rr reverse recovery time - 18 - n s q rr reverse recovery charge i sd = - 7 a, di sd /dt =10 0a/ m s - 10 - n c
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - n o v . , 2 0 0 9 w w w . a n p e c . c o m . t w 3 a p m 4 3 2 3 k e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 4323k symbol parameter test condition s min. typ. max. unit dynamic characteristics e r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz - 8 - w c iss input capacitance - 1150 - c oss output capacitance - 150 - c rss r everse transfer capacitance v gs =0v , v ds = - 15v , f requency =1.0mhz - 105 - pf t d(on) turn - on delay time - 10 20 t r turn - on rise time - 11 21 t d(off) turn - off delay time - 49 89 t f turn - off fall time v dd = - 15v, r l = 15 w , i d s = - 1a, v gen = - 10 v, r g =6 w - 20 39 ns gate charge characteristics e q g total gate charge - 17 28 q gs gate - source charge - 2.5 - q gd gate - drain charge v ds = - 1 5 v, v gs = - 10 v, i d s = - 7 a - 5 - nc note d : pulse test ; pulse width 3 00 m s, duty cycle 2% . note e : guaranteed by design, not subject to production testing .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - n o v . , 2 0 0 9 w w w . a n p e c . c o m . t w 4 a p m 4 3 2 3 k 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 t a =25 o c,v g =-10v 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t a =25 o c t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s p o w e r d i s s i p a t i o n d r a i n c u r r e n t s a f e o p e r a t i o n a r e a t h e r m a l t r a n s i e n t i m p e d a n c e t j - junction temperature ( o c) t j - junction temperature ( o c) p tot - power (w) -i d - drain current (a) -i d - drain current (a) normalized transient thermal resistance - v d s - d r a i n - s o u r c e v o l t a g e ( v ) s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 50 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 0.01 0.1 1 10 100 300 0.01 0.1 1 10 100 rds(on) limit 1s t a =25 o c 10ms 300 m s 1ms 100ms dc
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - n o v . , 2 0 0 9 w w w . a n p e c . c o m . t w 5 a p m 4 3 2 3 k 2 3 4 5 6 7 8 9 10 10 20 30 40 50 60 70 80 i ds =-7a t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 35 40 -4.5v -3.5v -4v -3v v gs = -5,-6,-7,-8,-9,-10v 0 8 16 24 32 40 7 14 21 28 35 42 49 56 63 70 v gs =-4.5v v gs =-10v o u t p u t c h a r a c t e r i s t i c s d r a i n - s o u r c e o n r e s i s t a n c e g a t e - s o u r c e o n r e s i s t a n c e gate threshold voltage - v d s - d r a i n - s o u r c e v o l t a g e ( v ) - i d - d r a i n c u r r e n t ( a ) -i d - drain current (a) r ds(on) - on resistance (m w ) normalized threshold voltage - v g s - g a t e - s o u r c e v o l t a g e ( v ) t j - junction temperature ( o c) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds = -250 m a r ds(on) - on resistance (m w )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - n o v . , 2 0 0 9 w w w . a n p e c . c o m . t w 6 a p m 4 3 2 3 k t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 40 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 0 200 400 600 800 1000 1200 1400 1600 frequency=1mhz crss coss ciss d r a i n - s o u r c e o n r e s i s t a n c e s o u r c e - d r a i n d i o d e f o r w a r d - v s d - s o u r c e - d r a i n v o l t a g e ( v ) c a p a c i t a n c e gate charge t j - junction temperature ( o c) normalized on resistance -i s - source current (a) c - capacitance (pf) -v gs - gate-source voltage (v) - v d s - d r a i n - s o u r c e v o l t a g e ( v ) q g - g a t e c h a r g e ( n c ) -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j =25 o c: 24m w v gs = -10v i ds = -7a 0 3 6 9 12 15 18 0 1 2 3 4 5 6 7 8 9 10 v ds = -15v i ds = -7a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - n o v . , 2 0 0 9 w w w . a n p e c . c o m . t w 7 a p m 4 3 2 3 k a v a l a n c h e t e s t c i r c u i t a n d w a v e f o r m s dut 0.01 w tp v dd v ds l i l r g e as v dd t av i as v ds t p v dsx(sus) v dd r d dut v gs v d s r g tp t d (on) t r t d (off) t f v gs v ds 90% 10% s w i t c h i n g t i m e t e s t c i r c u i t a n d w a v e f o r m s
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - n o v . , 2 0 0 9 w w w . a n p e c . c o m . t w 8 a p m 4 3 2 3 k p a c k a g e i n f o r m a t i o n s o p - 8 a a 1 a 2 l view a 0 . 2 5 seating plane gauge plane note: 1. follow jedec ms-012 aa. 2. dimension ? d ? does not include mold flash, protrusions or gate burrs. mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. dimension ? e ? does not include inter-lead flash or protrusions. inter-lead flash and protrusions shall not exceed 10 mil per side. s y m b o l min. max. 1.75 0.10 0.17 0.25 0.25 a a1 c d e e1 e h l millimeters b 0.31 0.51 sop-8 0.25 0.50 0.40 1.27 min. max. inches 0.069 0.004 0.012 0.020 0.007 0.010 0.010 0.020 0.016 0.050 0 0.010 1.27 bsc 0.050 bsc a2 1.25 0.049 0 8 0 8 3.80 5.80 4.80 4.00 6.20 5.00 0.189 0.197 0.228 0.244 0.150 0.157 d e e e 1 b see view a c h x 4 5 -t- seating plane < 4 mils
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - n o v . , 2 0 0 9 w w w . a n p e c . c o m . t w 9 a p m 4 3 2 3 k c a r r i e r t a p e & r e e l d i m e n s i o n s h t1 a d a e 1 a b w f t p0 od0 b a0 p2 k0 b 0 section b-b section a-a od1 p1 d e v i c e s p e r u n i t package type unit quantity sop - 8 tape & reel 2500 application a h t1 c d d w e1 f 330.0 ? 2.00 50 min. 12.4+2.00 - 0.00 13.0+0.50 - 0.20 1.5 min. 20.2 min. 12.0 ? 0.30 1.75 ? 0.10 5.5 ? 0.05 p 0 p1 p 2 d 0 d1 t a 0 b 0 k 0 sop - 8 4.0 ? 0.10 8.0 ? 0.10 2.0 ? 0.05 1.5+0.10 - 0.00 1.5 min. 0.6+0.00 - 0.40 6.40 ? 0.20 5.20 ? 0.20 2.10 ? 0.20 (mm)
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - n o v . , 2 0 0 9 w w w . a n p e c . c o m . t w 1 0 a p m 4 3 2 3 k t a p i n g d i r e c t i o n i n f o r m a t i o n s o p - 8 user direction of feed c l a s s i f i c a t i o n p r o f i l e
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - n o v . , 2 0 0 9 w w w . a n p e c . c o m . t w 1 1 a p m 4 3 2 3 k profile feature sn - pb eutectic assembly pb - free assembly preheat & soak temperature min (t smin ) temperature max (t smax ) time (t smin to t smax ) ( t s ) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 1 2 0 seconds average ramp - up rate (t smax to t p ) 3 c/second ma x. 3 c/second max. liquidous temperature ( t l ) time at l iquidous (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak package body temperature (t p ) * see classification temp in table 1 see classification temp in table 2 time (t p ) ** within 5 c of the spec ified c lassification t emperature ( t c ) 2 0 ** seconds 3 0 ** seconds average r amp - down rate (t p to t smax ) 6 c/second max. 6 c/second max. time 25 c to p eak t emperature 6 minutes max. 8 minutes max. * tolerance for peak profile temperature (t p ) is defined a s a supplier minimum and a user maximum. ** tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. c l a s s i f i c a t i o n r e f l o w p r o f i l e s table 2. pb - free process ? classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 c 260 c 260 c 1.6 mm ? 2.5 mm 260 c 250 c 245 c 3 2.5 mm 250 c 245 c 245 c table 1. snpb eutectic process ? classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 235 c 22 0 c 3 2.5 mm 220 c 220 c r e l i a b i l i t y t e s t p r o g r a m test item method description solderability jesd - 22, b102 5 sec, 245 c holt jesd - 22, a108 1000 hrs, bias @ 125 c pct jesd - 22, a102 168 hrs, 100 % rh, 2atm , 121 c tct jesd - 22, a104 500 cycles, - 65 c~150 c
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - n o v . , 2 0 0 9 w w w . a n p e c . c o m . t w 1 2 a p m 4 3 2 3 k c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 2f, no. 11, lane 218, sec 2 jhongsing rd., sindain city, taipei county 23146, taiwan tel : 886-2-2910-3838 fax : 886-2-2917-3838

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